* of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. This IGBT is ideal for many high voltage switching application
HGTG20N60A4 Datasheet (354.43 KB)
HGTG20N60A4
Intersil Corporation
354.43 KB
N-channel igbt.
HGTG20N60A4, HGTP20N60A4
Data Sheet October 1999 File Number 4781.1
600V, SMPS Series N-Channel IGBTs
The HGTG20N60A4 and HGTP20N60A4 are MOS gated h.
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