* of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The diode used in anti-parallel with the IGBT is the RHRP3060. The
HGTG20N60B3D Datasheet (135.08 KB)
HGTG20N60B3D
Intersil Corporation
135.08 KB
N-channel igbt.
HGTG20N60B3D Data Sheet January 2000 File Number 3739.6 40A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG20N60B3D is a.
📁 Related Datasheet
HGTG20N60B3 N-Channel IGBT (Fairchild Semiconductor)
HGTG20N60B3 N-Channel IGBT (Intersil Corporation)
HGTG20N60B3 N-Channel IGBT (ON Semiconductor)
HGTG20N60B3D N-Channel IGBT (Fairchild Semiconductor)
HGTG20N60B3D N-Channel IGBT (ON Semiconductor)
HGTG20N60A4 N-Channel IGBT (Fairchild Semiconductor)
HGTG20N60A4 N-Channel IGBT (Intersil Corporation)
HGTG20N60A4 IGBT (ON Semiconductor)
HGTG20N60A4D N-Channel IGBT (Fairchild Semiconductor)
HGTG20N60A4D N-Channel IGBT (ON Semiconductor)
