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HGTG20N60B3D Datasheet - Intersil Corporation

HGTG20N60B3D - N-Channel IGBT

HGTG20N60B3D Features

* of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The diode used in anti-parallel with the IGBT is the RHRP3060. The

HGTG20N60B3D_IntersilCorporation.pdf

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Datasheet Details

Part number:

HGTG20N60B3D

Manufacturer:

Intersil Corporation

File Size:

135.08 KB

Description:

N-channel igbt.

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