* of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The diode used in anti-parallel with the IGBT is the RHRP3060. The
HGTG20N60B3D Datasheet (135.08 KB)
HGTG20N60B3D
Intersil Corporation
135.08 KB
N-channel igbt.
HGTG20N60B3D
Data Sheet January 2000 File Number 3739.6
40A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
The HGTG20N60B3D is a.
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