* of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low onstate conduction loss of a bipolar transistor. The IGBT used is the development type TA49308. The Diode used is the development type TA49058 (Part number RHRD6120). The IGBT is ideal for many high
HGTG5N120BND Datasheet (89.22 KB)
HGTG5N120BND
Intersil Corporation
89.22 KB
N-channel igbt.
HGTG5N120BND, HGTP5N120BND, HGT1S5N120BNDS
Data Sheet January 2000 File Number 4597.2
21A, 1200V, NPT Series N-Channel IGBTs with Anti-Parallel Hyper.
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