HGTG5N120CND Datasheet, Igbt, Intersil Corporation

HGTG5N120CND Features

• Igbt of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The IGBT used is developmental typ

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Part number:

HGTG5N120CND

Manufacturer:

Intersil Corporation

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87.10kb

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📄 Datasheet

Description:

N-channel igbt.

HGTG5N120CND Application

• Applications operating at moderate frequencies where low conduction losses are essential, such as AC and DC motor controls, power supplies and drive

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HGTG5N120CND

Intersil Corporation

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