Part number:
HGTG5N120CND
Manufacturer:
Intersil Corporation
File Size:
87.10 KB
Description:
N-channel igbt.
HGTG5N120CND Datasheet (87.10 KB)
Datasheet Details
HGTG5N120CND Features
* of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The IGBT used is developmental type TA49309. The diode used in anti-parallel is developmental type TA49058. The IGBT is ideal for many high voltage s
HGTG5N120CND Datasheet (87.10 KB)
Datasheet Details
HGTG5N120CND
Intersil Corporation
87.10 KB
N-channel igbt.
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