* of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The IGBT used is the development type TA49308. The Diode used is the development type TA49058 (Part number RHRD6120). The IGBT is ideal for many high
HGTG5N120BND Datasheet (216.82 KB)
HGTG5N120BND
Fairchild Semiconductor
216.82 KB
N-channel igbt.
HGTG5N120BND, HGTP5N120BND
Data Sheet May 2003
21A, 1200V, NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes
The HGTG5N120BND and HGTP5N.
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