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HGTP12N60A4 Datasheet - Intersil Corporation

HGTP12N60A4 N-Channel IGBT

HGTP12N60A4 Features

* of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. This IGBT is ideal for many high voltage switching application

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Datasheet Details

Part number:

HGTP12N60A4

Manufacturer:

Intersil Corporation

File Size:

115.04 KB

Description:

N-channel igbt.

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