* 2.5A, 500V
* rDS(ON) = 3.000Ω
* Single Pulse Avalanche Energy Rated
* SOA is Power Dissipation Limited
* Nanosecond Switching Speeds
* Linear Transfer Characteristics
* High Input Impedance
* Related Literature - TB334 “Guidelines for
IRF820
Intersil Corporation
54.37 KB
N-channel power mosfet.
IRF820 Data Sheet July 1999 File Number 1581.4 2.5A, 500V, 3.000 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field .
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