IRF830 Datasheet - Intersil Corporation

IRF830 N-Channel Power MOSFET

IRF830 Data Sheet July 1999 File Number 1582.3 4.5A, 500V, 1.500 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power ﬁeld effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a speciﬁed level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching t.

IRF830 Features

* 4.5A, 500V

* rDS(ON) = 1.500Ω

* Single Pulse Avalanche Energy Rated

* SOA is Power Dissipation Limited

* Nanosecond Switching Speeds

* Linear Transfer Characteristics

* High Input Impedance

* Related Literature - TB334 “Guidelines for

IRF830_IntersilCorporation.pdf

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Datasheet Details

Part number:

IRF830

Manufacturer:

Intersil Corporation

File Size:

56.16 KB

Description:

N-channel power mosfet.

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IRF830 IRF830 N-Channel Power MOSFET Intersil Corporation

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