RF1S4N100SM Datasheet - Intersil Corporation

RF1S4N100SM 4.3A/ 1000V/ 3.500 Ohm/ High Voltage/ N-Channel Power MOSFETs

only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliab.

RFP4N100, RF1S4N100SM Data Sheet August 1999 File Number 2457.4 4.3A, 1000V, 3.500 Ohm, High Voltage, N-Channel Power MOSFETs The RFP4N100 and RFP4N100SM are N-Channel enhancement mode silicon gate power field effect transistors. They are designed for use in applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. This type can be operated directly from a.

RF1S4N100SM Features

* 4.3A, 1000V

* rDS(ON) = 3.500Ω

* UIS Rating Curve (Single Pulse)

* -55oC to 150oC Operating Temperature

* Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol D Ordering Information PART NUMBER RFP4N100 RF1S4N1

RF1S4N100SM Datasheet (46.00 KB)

RF1S4N100SM Datasheet Preview — Preview of RF1S4N100SM PDF

Datasheet Details

Part number:

RF1S4N100SM

Manufacturer:

Intersil Corporation

File Size:

46.00 KB

Description:

4.3a/ 1000v/ 3.500 ohm/ high voltage/ n-channel power mosfets.

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RF1S4N100SM 4.3A 1000V 3.500 Ohm High Voltage N-Channel Power MOSFETs Intersil Corporation

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