RF1S4N100SM Datasheet (Intersil Corporation) - 4.3A/ 1000V/ 3.500 Ohm/ High Voltage/ N-Channel Power MOSFETs

RF1S4N100SM, 4.3A/ 1000V/ 3.500 Ohm/ High Voltage/ N-Channel Power MOSFETs

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RFP4N100, RF1S4N100SM Data Sheet August 1999 File Number 2457.4 4.3A, 1000V, 3.500 Ohm, High Voltage, N-Channel Power MOSFETs The RFP4N100 and RFP4N100SM are N-Channel enhancement mode silicon gate power field effect transistors.

They are designed for use in applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power.

This type can be operated directly from a

RF1S4N100SM Features

* 4.3A, 1000V

* rDS(ON) = 3.500Ω

* UIS Rating Curve (Single Pulse)

* -55oC to 150oC Operating Temperature

* Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol D Ordering Information PART NUMBER RFP4N100 RF1S4N1