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JANSR2N7399 11A/ 100V/ 0.210 Ohm/ Rad Hard/ N-Channel Power MOSFET

JANSR2N7399 Description

JANSR2N7399 Formerly FSS130R4 June 1998 11A, 100V, 0.210 Ohm, Rad Hard, N-Channel Power MOSFET .
The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and.

JANSR2N7399 Features

* 11A, 100V, rDS(ON) = 0.210Ω
* Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si)
* Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V Off-Bias
* Dose Ra

JANSR2N7399 Applications

* Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined with 100K RADS of total dose hardness to provide devices which are ideally suited to harsh space environments. The dose rate and neutron tolerance necessary for military applica

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Datasheet Details

Part number
JANSR2N7399
Manufacturer
Intersil Corporation
File Size
44.09 KB
Datasheet
JANSR2N7399_IntersilCorporation.pdf
Description
11A/ 100V/ 0.210 Ohm/ Rad Hard/ N-Channel Power MOSFET

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11A 100V 0.210 Ohm Rad Hard N-Channel Power MOSFET Intersil Corporation
Intersil Corporation JANSR2N7399-like datasheet