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KHB5D0N50P, KHB5D0N50F - N CHANNEL MOS FIELD EFFECT TRANSISTOR

KHB5D0N50P Description

SEMICONDUCTOR TECHNICAL DATA General .
KHB5D0N50P/F/F2 N CHANNEL MOS FIELD EFFECT TRANSISTOR KHB5D0N50P A O C F E G B Q I K M L J D N N H P DIM MILLIMETERS _ 0.

KHB5D0N50P Features

* VDSS= 500V, ID= 5.0A Drain-Source ON Resistance : RDS(ON)=1.5 @VGS = 10V Qg(typ. ) = 21nC 15.95 MAX 1.3+0.1/-0.05 _ 0.1 0.8 + _ 0.2 3.6 + _ 0.1 2.8 + 3.7 0.5+0.1/-0.05 1.5 _ 0.3 13.08 + 1.46 _ 0.1 1.4 + _ 0.1 1.27 + _ 0.2 2.54 + _ 4.5 + 0.2 _ 0.2 2.4 + _ 0.2 9.2 + MAXIMUM RATING (Tc=25 www. DataShee

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This datasheet PDF includes multiple part numbers: KHB5D0N50P, KHB5D0N50F. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
KHB5D0N50P, KHB5D0N50F
Manufacturer
KEC
File Size
525.13 KB
Datasheet
KHB5D0N50F_KEC.pdf
Description
N CHANNEL MOS FIELD EFFECT TRANSISTOR
Note
This datasheet PDF includes multiple part numbers: KHB5D0N50P, KHB5D0N50F.
Please refer to the document for exact specifications by model.

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CHANNEL MOS FIELD EFFECT TRANSISTOR KEC
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