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KHB5D0N50P

N CHANNEL MOS FIELD EFFECT TRANSISTOR

KHB5D0N50P Features

* VDSS= 500V, ID= 5.0A Drain-Source ON Resistance : RDS(ON)=1.5 @VGS = 10V Qg(typ.) = 21nC 15.95 MAX 1.3+0.1/-0.05 _ 0.1 0.8 + _ 0.2 3.6 + _ 0.1 2.8 + 3.7 0.5+0.1/-0.05 1.5 _ 0.3 13.08 + 1.46 _ 0.1 1.4 + _ 0.1 1.27 + _ 0.2 2.54 + _ 4.5 + 0.2 _ 0.2 2.4 + _ 0.2 9.2 + MAXIMUM RATING (Tc=25 www.DataShee

KHB5D0N50P General Description

KHB5D0N50P/F/F2 N CHANNEL MOS FIELD EFFECT TRANSISTOR KHB5D0N50P A O C F E G B Q I K M L J D N N H P DIM MILLIMETERS _ 0.2 9.9 + A B C D E F G H I J K L M N O 1 2 3 This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent .

KHB5D0N50P Datasheet (525.13 KB)

Preview of KHB5D0N50P PDF

Datasheet Details

Part number:

KHB5D0N50P

Manufacturer:

KEC

File Size:

525.13 KB

Description:

N channel mos field effect transistor.

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KHB5D0N50P CHANNEL MOS FIELD EFFECT TRANSISTOR KEC

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