LPM2302

N-Channel Enhancement Mode Field Effect Transistor

LPM2302 Features

* 20V/3.5A, RDS(ON)=50mΩ(Typ.)@VGS=4.5V

* 20V/3.0A, RDS(ON)=75mΩ(Typ.)@VGS=2.5V

* Super high density cell design for extremely low RDS(ON)

* SOT23 Package Applications

* Portable Media Players

* Cellular and Smart mobile phone

* LCD

* DSC Sensor

* Wireless Card 

LPM2302 General Description

The LPM2302 is N-channel logic enhancement mode power field effect transistor, which are produced by using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suitable for low voltage applications.

LPM2302 Datasheet (221.00 KB)