LPM2302 - N-Channel Enhancement Mode Field Effect Transistor
The LPM2302 is N-channel logic enhancement mode power field effect transistor, which are produced by using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suitable for low voltage applications
LPM2302 Features
* 20V/3.5A, RDS(ON)=50mΩ(Typ.)@VGS=4.5V
* 20V/3.0A, RDS(ON)=75mΩ(Typ.)@VGS=2.5V
* Super high density cell design for extremely low RDS(ON)
* SOT23 Package Applications
* Portable Media Players
* Cellular and Smart mobile phone
* LCD
* DSC Sensor
* Wireless Card
