Datasheet Details
Part number:
ME2301GC-G, ME2301GC
Manufacturer:
Matsuki
File Size:
884.19 KB
Description:
P-channel 20v (d-s) mosfet.
Note:
This datasheet PDF includes multiple part numbers: ME2301GC-G, ME2301GC.
Please refer to the document for exact specifications by model.
ME2301GC-G, ME2301GC, P-Channel 20V (D-S) MOSFET
The ME2301GC is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such a
ME2301GC-G Features
* RDS(ON) ≦75mΩ@VGS=-4.5V
* RDS(ON) ≦95mΩ@VGS=-2.5V
* RDS(ON) ≦130mΩ@VGS=-1.8V
* Super high density cell design for extremely low RDS(ON)
* Exceptional on-resistance and maximum DC current capability APPLICATIONS
* Power Management in Note book
* Portable Equipment
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