Description
P-Channel 20V (D-S) MOSFET ME2301GC/ ME2301GC-G GENERAL .
The ME2301GC is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.
Features
* RDS(ON) ≦75mΩ@VGS=-4.5V
* RDS(ON) ≦95mΩ@VGS=-2.5V
* RDS(ON) ≦130mΩ@VGS=-1.8V
* Super high density cell design for extremely low RDS(ON)
Applications
* Power Management in Note book
* Portable Equipment
* Battery Powered System
* Load Switch
* DSC
e Ordering Information: ME2301GC (Pb-f