ME4856 N-Channel 30-V(D-S) MOSFET

Matsuki

Description

N-Channel 30-V(D-S) MOSFET GENERAL .
The ME4856 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.

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Datasheet Specifications

Part number: ME4856
Manufacturer: Matsuki
File Size: 664.76 KB
Datasheet: ME4856-Matsuki.pdf
Description: N-Channel 30-V(D-S) MOSFET

Features

* RDS(ON)≦6mΩ@VGS=10V
* RDS(ON)≦8.5mΩ@VGS=4.5V
* Super high density cell design for extremely low RDS(ON)

Applications

* Power Management in Note book
* Battery Powered System
* DC/DC Converter
* Load Switch PIN CONFIGURATION (SOP-8) Top View Absolute Maximum Ratings (TA=25℃ Unless Otherwise Noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current( TJ =150℃) TA=25℃ TA

ME4856 Distributors

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ME4856 N-Channel 30-VD-S MOSFET Matsuki

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