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ME4856 N-Channel 30-V(D-S) MOSFET

ME4856 Description

N-Channel 30-V(D-S) MOSFET GENERAL .
The ME4856 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.

ME4856 Features

* RDS(ON)≦6mΩ@VGS=10V
* RDS(ON)≦8.5mΩ@VGS=4.5V
* Super high density cell design for extremely low RDS(ON)

ME4856 Applications

* Power Management in Note book
* Battery Powered System
* DC/DC Converter
* Load Switch PIN CONFIGURATION (SOP-8) Top View Absolute Maximum Ratings (TA=25℃ Unless Otherwise Noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current( TJ =150℃) TA=25℃ TA

📥 Download Datasheet

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Datasheet Details

Part number
ME4856
Manufacturer
Matsuki
File Size
664.76 KB
Datasheet
ME4856-Matsuki.pdf
Description
N-Channel 30-V(D-S) MOSFET

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N-Channel 30-VD-S MOSFET Matsuki
Matsuki ME4856-like datasheet