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ME8117A-G Datasheet - Matsuki

P-Channel MOSFET

ME8117A-G Features

* RDS(ON)≦5.2mΩ@VGS=-10V

* RDS(ON)≦10.5mΩ@VGS=-4V

* Super high density cell design for extremely low RDS(ON)

* Exceptional on-resistance and maximum DC current capability APPLICATIONS

* Power Management in Note book

* Portable Equipment

* Battery Powered System

* DC/D

ME8117A-G General Description

The ME8117A-G is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such .

ME8117A-G Datasheet (1.99 MB)

Preview of ME8117A-G PDF

Datasheet Details

Part number:

ME8117A-G

Manufacturer:

Matsuki

File Size:

1.99 MB

Description:

P-channel mosfet.

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ME8117A-G P-Channel MOSFET Matsuki

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