ME8117A-G - P-Channel MOSFET
The ME8117A-G is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such
ME8117A-G Features
* RDS(ON)≦5.2mΩ@VGS=-10V
* RDS(ON)≦10.5mΩ@VGS=-4V
* Super high density cell design for extremely low RDS(ON)
* Exceptional on-resistance and maximum DC current capability APPLICATIONS
* Power Management in Note book
* Portable Equipment
* Battery Powered System
* DC/D
