ME8117A-G, ME8117A Datasheet - Matsuki

ME8117A-G P-Channel MOSFET

The ME8117A-G is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such .

ME8117A-G Features

* RDS(ON)≦5.2mΩ@VGS=-10V

* RDS(ON)≦10.5mΩ@VGS=-4V

* Super high density cell design for extremely low RDS(ON)

* Exceptional on-resistance and maximum DC current capability APPLICATIONS

* Power Management in Note book

* Portable Equipment

* Battery Powered System

* DC/D

ME8117A-Matsuki.pdf

ME8117A-G Datasheet Preview — This datasheet PDF includes multiple part numbers: ME8117A-G, ME8117A. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

ME8117A-G, ME8117A

Manufacturer:

Matsuki

File Size:

1.99 MB

Description:

P-channel mosfet.

Note:

This datasheet PDF includes multiple part numbers: ME8117A-G, ME8117A.
Please refer to the document for exact specifications by model.

ME8117A-G Distributor

📁 Related Datasheet

ME8117A P-Channel MOSFET (Matsuki)

ME8117 P-Channel MOSFET (Matsuki)

ME8117-G P-Channel MOSFET (Matsuki)

ME8110 Power Management IC (ETC)

ME8110 Current Mode PWM Power Switch (Microne)

ME8110B High performance current mode PWM controller (YUSHIN)

ME8115 High-Performance Current Mode PWM Switching Power Controller (Microne)

ME8119 Current Mode PWM Controller (Microne)

TAGS

ME8117A-G ME8117A P-Channel MOSFET Matsuki