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ME8107 - P-Channel Enhancement Mode MOSFET

ME8107 Description

ME8107/ME8107-G P-Channel Enhancement Mode MOSFET, ESD Protected GENERAL .
The ME8107 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

ME8107 Features

* RDS(ON)≦7.2mΩ@VGS=-10V
* RDS(ON)≦12mΩ@VGS=-4.5V
* Super high density cell design for extremely low RDS(ON)

ME8107 Applications

* Power Management in Note book
* Portable Equipment
* Battery Powered System
* DC/DC Converter
* Load Switch
* LCD Display inverter e Ordering Information: ME8107(Pb-free) ME8107-G (Green product-Halogen free) Absolute Maximum Ratings (TA=25℃ Unless Otherwise Noted) Parame

📥 Download Datasheet

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Datasheet Details

Part number
ME8107
Manufacturer
Matsuki
File Size
866.48 KB
Datasheet
ME8107-Matsuki.pdf
Description
P-Channel Enhancement Mode MOSFET

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P-Channel Enhancement Mode MOSFET Matsuki
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