Datasheet4U Logo Datasheet4U.com

MEBSS123

N-Channel MOSFET

MEBSS123 Features

* RDS(ON)≦6Ω@VGS=10V

* RDS(ON)≦10Ω@VGS=4.5V

* Super high density cell design for extremely low RDS(ON)

* Exceptional on-resistance and maximum DC current capability APPLICATIONS

* Power Management in Note book

* DC/DC Converter

* Load Switch

* LCD Display inverter

MEBSS123 General Description

The MEBSS123 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such a.

MEBSS123 Datasheet (726.96 KB)

Preview of MEBSS123 PDF

Datasheet Details

Part number:

MEBSS123

Manufacturer:

Matsuki

File Size:

726.96 KB

Description:

N-channel mosfet.

📁 Related Datasheet

MEBSS123-G N-Channel MOSFET (Matsuki)

MEBSS138 N-Channel MOSFET (Matsuki)

MEBSS138-G N-Channel MOSFET (Matsuki)

MEBSS138D N-Channel MOSFET (Matsuki)

MEBSS138D-G N-Channel MOSFET (Matsuki)

MEBSS138DK N-Channel MOSFET (Matsuki)

MEBSS138DK-G N-Channel MOSFET (Matsuki)

MEBSS84 P-Channel MOSFET (Matsuki)

MEBSS84-G P-Channel MOSFET (Matsuki)

MEB Micro Edgeboard (ITT Industries)

TAGS

MEBSS123 N-Channel MOSFET Matsuki

Image Gallery

MEBSS123 Datasheet Preview Page 2 MEBSS123 Datasheet Preview Page 3

MEBSS123 Distributor