Datasheet4U Logo Datasheet4U.com

MEBSS123 Datasheet - Matsuki

MEBSS123-Matsuki.pdf

Preview of MEBSS123 PDF
MEBSS123 Datasheet Preview Page 2 MEBSS123 Datasheet Preview Page 3

Datasheet Details

Part number:

MEBSS123

Manufacturer:

Matsuki

File Size:

726.96 KB

Description:

N-channel mosfet.

MEBSS123, N-Channel MOSFET

The MEBSS123 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

These devices are particularly suited for low voltage application such a

MEBSS123 Features

* RDS(ON)≦6Ω@VGS=10V

* RDS(ON)≦10Ω@VGS=4.5V

* Super high density cell design for extremely low RDS(ON)

* Exceptional on-resistance and maximum DC current capability APPLICATIONS

* Power Management in Note book

* DC/DC Converter

* Load Switch

* LCD Display inverter

📁 Related Datasheet

📌 All Tags