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MEBSS123 - N-Channel MOSFET

Matsuki

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Datasheet Details

Part number	MEBSS123
Manufacturer	Matsuki
File Size	726.96 KB
Description	N-Channel MOSFET
Datasheet	MEBSS123-Matsuki.pdf

MEBSS123 Product details

Description

The MEBSS123 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

Features

RDS(ON)≦6Ω@VGS=10V.
RDS(ON)≦10Ω@VGS=4.5V.
Super high density cell design for extremely low RDS(ON).
Exceptional on-resistance and maximum DC current capability.

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Published: Mar 20, 2018 |