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MEBSS123-G

N-Channel MOSFET

MEBSS123-G Features

* RDS(ON)≦6Ω@VGS=10V

* RDS(ON)≦10Ω@VGS=4.5V

* Super high density cell design for extremely low RDS(ON)

* Exceptional on-resistance and maximum DC current capability APPLICATIONS

* Power Management in Note book

* DC/DC Converter

* Load Switch

* LCD Display inverter

MEBSS123-G General Description

The MEBSS123 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such a.

MEBSS123-G Datasheet (726.96 KB)

Preview of MEBSS123-G PDF

Datasheet Details

Part number:

MEBSS123-G

Manufacturer:

Matsuki

File Size:

726.96 KB

Description:

N-channel mosfet.

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TAGS

MEBSS123-G N-Channel MOSFET Matsuki

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