MEBSS123-G Datasheet, Mosfet, Matsuki

MEBSS123-G Features

• Mosfet
• RDS(ON)≦6Ω@VGS=10V
• RDS(ON)≦10Ω@VGS=4.5V
• Super high density cell design for extremely low RDS(ON)
• Exceptional on-resistance and maximum DC current

PDF File Details

Part number:

MEBSS123-G

Manufacturer:

Matsuki

File Size:

726.96kb

Download:

📄 Datasheet

Description:

N-channel mosfet. The MEBSS123 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench

MEBSS123-G Application

• Applications
• Power Management in Note book
• DC/DC Converter
• Load Switch
• LCD Display inverter
• Th Or

TAGS

MEBSS123-G

Matsuki

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