MEBSS123-G, MEBSS123 Datasheet - Matsuki

MEBSS123-G, MEBSS123, N-Channel MOSFET

N - Channel 100-V (D-S) MOSFET MEBSS123/MEBSS123-G GENERAL .
The MEBSS123 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

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MEBSS123-Matsuki.pdf

MEBSS123-G Datasheet Preview — This datasheet PDF includes multiple part numbers: MEBSS123-G, MEBSS123. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

MEBSS123-G, MEBSS123

Manufacturer:

Matsuki

File Size:

726.96 KB

Description:

N-Channel MOSFET

Note:

This datasheet PDF includes multiple part numbers: MEBSS123-G, MEBSS123.
Please refer to the document for exact specifications by model.

Features

* RDS(ON)≦6Ω@VGS=10V
* RDS(ON)≦10Ω@VGS=4.5V
* Super high density cell design for extremely low RDS(ON)

Applications

* Power Management in Note book
* DC/DC Converter
* Load Switch
* LCD Display inverter
* Th Ordering Information: MEBSS123 (Pb-free)
* MEBSS123-G (Green product-Halogen free)

MEBSS123-G Distributors

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MEBSS123 N-Channel MOSFET Matsuki

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