Datasheet Details
Part number:
MEBSS123-G, MEBSS123
Manufacturer:
Matsuki
File Size:
726.96 KB
Description:
N-channel mosfet.
Note:
This datasheet PDF includes multiple part numbers: MEBSS123-G, MEBSS123.
Please refer to the document for exact specifications by model.
MEBSS123-G, MEBSS123, N-Channel MOSFET
The MEBSS123 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such a
MEBSS123-G Features
* RDS(ON)≦6Ω@VGS=10V
* RDS(ON)≦10Ω@VGS=4.5V
* Super high density cell design for extremely low RDS(ON)
* Exceptional on-resistance and maximum DC current capability APPLICATIONS
* Power Management in Note book
* DC/DC Converter
* Load Switch
* LCD Display inverter
📁 Related Datasheet
📌 All Tags
