* Low capacitances and low gate charge
* Fast switching speed due to low internal gate resistance (ESR)
* Stable operation at high junction temperature, TJ(max) = 175 °C
* Fast and reliable body diode
* Superior avalanche ruggedness
* RoHS compliant Be
MSC080SMA120B Datasheet (6.11 MB)
MSC080SMA120B
6.11 MB
N-channel mosfet.
1200V, 80 mΩ N-Channel mSiC™ MOSFET
MSC080SMA120B
Product Overview
1200V, 80 mΩ typical at 20 VGS, Silicon Carbide (SiC) N-Channel MOSFET, TO-247.
Fe.
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