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MSAER12N50A, MSAFR12N50A N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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Description

2830 S.Fairview St.Santa Ana, CA 92704 PH: (714) 979-8220 FAX: (714) 966-5256 MSAER12N50A MSAFR12N50A 500 Volts 12 Amps 400 mΩ N-CHANNEL ENHANCEMEN.
Drain-to-Source Breakdown Voltage (Gate Shorted to Source) @ TJ ≥ 25°C SYMBOL BVDSS BVDGR VGS VGSM ID25 ID100 IDM IAR EAR EAS dv/dt PD Tj Tstg IS ISM.

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This datasheet PDF includes multiple part numbers: MSAER12N50A, MSAFR12N50A. Please refer to the document for exact specifications by model.
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Datasheet Specifications

Part number
MSAER12N50A, MSAFR12N50A
Manufacturer
Microsemi ↗ Corporation
File Size
68.30 KB
Datasheet
MSAFR12N50A_MicrosemiCorporation.pdf
Description
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Note
This datasheet PDF includes multiple part numbers: MSAER12N50A, MSAFR12N50A.
Please refer to the document for exact specifications by model.

Features

* Ultrafast rectifier in parallel with the body diode (MSAE type only) Rugged polysilicon gate cell structure Increased Unclamped Inductive Switching (UIS) capability Hermetically sealed, surface mount power package Low package ind

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