Datasheet4U Logo Datasheet4U.com

MSAEZ33N20A Datasheet - Microsemi Corporation

MSAEZ33N20A N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Drain-to-Source Breakdown Voltage (Gate Shorted to Source) @ TJ ≥ 25°C SYMBOL BVDSS BVDGR VGS VGSM ID25 ID100 IDM IAR EAR EAS dv/dt PD Tj Tstg IS ISM θJC MAX. 200 200 +/-20 +/-30 33 20 132 33 16 790 TBD 300 -55 to +150 -55 to +150 33 132 0.4 UNIT Volts Volts Volts Volts Amps Amps Amps mJ mJ V/ns .

MSAEZ33N20A Features

* Ultrafast rectifier in parallel with the body diode (MSAE type only) Rugged polysilicon gate cell structure Increased Unclamped Inductive Switching (UIS) capability Hermetically sealed, surface mount power package Low package ind

MSAEZ33N20A Datasheet (68.43 KB)

Preview of MSAEZ33N20A PDF
MSAEZ33N20A Datasheet Preview Page 2

Datasheet Details

Part number:

MSAEZ33N20A

Manufacturer:

Microsemi ↗ Corporation

File Size:

68.43 KB

Description:

N-channel enhancement mode power mosfet.

📁 Related Datasheet

MSAEZ50N10A N-CHANNEL ENHANCEMENT MODE POWER MOSFET (Microsemi Corporation)

MSAER12N50A N-CHANNEL ENHANCEMENT MODE POWER MOSFET (Microsemi Corporation)

MSAER30N20A N-CHANNEL ENHANCEMENT MODE POWER MOSFET (Microsemi Corporation)

MSA-0100 Cascadable Silicon Bipolar MMIC Amplifier (Hewlett-Packard)

MSA-0104 Cascadable Silicon Bipolar MMIC Amplifier (Hewlett-Packard)

MSA-0135 Cascadable Silicon Bipolar MMIC Amplifier (Hewlett-Packard)

MSA-0136 Cascadable Silicon Bipolar MMIC Amplifier (Hewlett-Packard)

MSA-0170 Cascadable Silicon Bipolar MMIC Amplifier (Hewlett-Packard)

TAGS

MSAEZ33N20A N-CHANNEL ENHANCEMENT MODE POWER MOSFET Microsemi Corporation

MSAEZ33N20A Distributor