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MSAEZ33N20A

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

MSAEZ33N20A Features

* Ultrafast rectifier in parallel with the body diode (MSAE type only) Rugged polysilicon gate cell structure Increased Unclamped Inductive Switching (UIS) capability Hermetically sealed, surface mount power package Low package ind

MSAEZ33N20A General Description

Drain-to-Source Breakdown Voltage (Gate Shorted to Source) @ TJ ≥ 25°C SYMBOL BVDSS BVDGR VGS VGSM ID25 ID100 IDM IAR EAR EAS dv/dt PD Tj Tstg IS ISM θJC MAX. 200 200 +/-20 +/-30 33 20 132 33 16 790 TBD 300 -55 to +150 -55 to +150 33 132 0.4 UNIT Volts Volts Volts Volts Amps Amps Amps mJ mJ V/ns .

MSAEZ33N20A Datasheet (68.43 KB)

Preview of MSAEZ33N20A PDF

Datasheet Details

Part number:

MSAEZ33N20A

Manufacturer:

Microsemi ↗ Corporation

File Size:

68.43 KB

Description:

N-channel enhancement mode power mosfet.
2830 S. Fairview St. Santa Ana, CA 92704 PH: (714) 979-8220 FAX: (714) 966-5256 MSAEZ33N20A MSAFZ33N20A 200 Volts 33 Amps 70 mΩ N-CHANNEL ENHANCEMENT.

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MSAEZ33N20A N-CHANNEL ENHANCEMENT MODE POWER MOSFET Microsemi Corporation

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