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MSAER30N20A, MSAFR30N20A N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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Description

2830 S.Fairview St.Santa Ana, CA 92704 PH: (714) 979-8220 FAX: (714) 966-5256 MSAER30N20A MSAFR30N20A 200 Volts 30 Amps 85 mΩ N-CHANNEL ENHANCEMENT.
Drain-to-Source Breakdown Voltage (Gate Shorted to Source) @ TJ ≥ 25°C SYMBOL BVDSS BVDGR VGS VGSM ID25 ID100 IDM IAR EAR EAS dv/dt PD Tj Tstg IS ISM.

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This datasheet PDF includes multiple part numbers: MSAER30N20A, MSAFR30N20A. Please refer to the document for exact specifications by model.
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Datasheet Specifications

Part number
MSAER30N20A, MSAFR30N20A
Manufacturer
Microsemi ↗ Corporation
File Size
68.30 KB
Datasheet
MSAFR30N20A_MicrosemiCorporation.pdf
Description
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Note
This datasheet PDF includes multiple part numbers: MSAER30N20A, MSAFR30N20A.
Please refer to the document for exact specifications by model.

Features

* Ultrafast rectifier in parallel with the body diode (MSAE type only) Rugged polysilicon gate cell structure Increased Unclamped Inductive Switching (UIS) capability Hermetically sealed, surface mount power package Low package ind

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