MSAEZ50N10A
Microsemi ↗ Corporation
68.31kb
N-channel enhancement mode power mosfet. Drain-to-Source Breakdown Voltage (Gate Shorted to Source) @ TJ ≥ 25°C SYMBOL BVDSS BVDGR VGS VGSM ID25 ID100 IDM IAR EAR EAS dv/dt
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