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MSAEZ50N10A, MSAFZ50N10A N-CHANNEL ENHANCEMENT MODE POWER MOSFET

MSAEZ50N10A Description

2830 S.Fairview St.Santa Ana, CA 92704 PH: (714) 979-8220 FAX: (714) 966-5256 MSAEZ50N10A MSAFZ50N10A 100 Volts 50 Amps 35 mΩ N-CHANNEL ENHANCEMENT.
Drain-to-Source Breakdown Voltage (Gate Shorted to Source) @ TJ ≥ 25°C SYMBOL BVDSS BVDGR VGS VGSM ID25 ID100 IDM IAR EAR EAS dv/dt PD Tj Tstg IS ISM.

MSAEZ50N10A Features

* Ultrafast rectifier in parallel with the body diode (MSAE type only) Rugged polysilicon gate cell structure Increased Unclamped Inductive Switching (UIS) capability Hermetically sealed, surface mount power package Low package ind

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This datasheet PDF includes multiple part numbers: MSAEZ50N10A, MSAFZ50N10A. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
MSAEZ50N10A, MSAFZ50N10A
Manufacturer
Microsemi ↗ Corporation
File Size
68.31 KB
Datasheet
MSAFZ50N10A_MicrosemiCorporation.pdf
Description
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Note
This datasheet PDF includes multiple part numbers: MSAEZ50N10A, MSAFZ50N10A.
Please refer to the document for exact specifications by model.

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N-CHANNEL ENHANCEMENT MODE POWER MOSFET Microsemi Corporation
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