Datasheet4U Logo Datasheet4U.com

MSAEZ50N10A

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

MSAEZ50N10A Features

* Ultrafast rectifier in parallel with the body diode (MSAE type only) Rugged polysilicon gate cell structure Increased Unclamped Inductive Switching (UIS) capability Hermetically sealed, surface mount power package Low package ind

MSAEZ50N10A General Description

Drain-to-Source Breakdown Voltage (Gate Shorted to Source) @ TJ ≥ 25°C SYMBOL BVDSS BVDGR VGS VGSM ID25 ID100 IDM IAR EAR EAS dv/dt PD Tj Tstg IS ISM θJC MAX. 100 100 +/-20 +/-30 50 40 200 50 18.5 400 TBD 300 -55 to +150 -55 to +150 50 200 0.4 UNIT Volts Volts Volts Volts Amps Amps Amps mJ mJ V/n.

MSAEZ50N10A Datasheet (68.31 KB)

Preview of MSAEZ50N10A PDF

Datasheet Details

Part number:

MSAEZ50N10A

Manufacturer:

Microsemi ↗ Corporation

File Size:

68.31 KB

Description:

N-channel enhancement mode power mosfet.
2830 S. Fairview St. Santa Ana, CA 92704 PH: (714) 979-8220 FAX: (714) 966-5256 MSAEZ50N10A MSAFZ50N10A 100 Volts 50 Amps 35 mΩ N-CHANNEL ENHANCEMENT.

📁 Related Datasheet

MSAEZ33N20A N-CHANNEL ENHANCEMENT MODE POWER MOSFET (Microsemi Corporation)

MSAER12N50A N-CHANNEL ENHANCEMENT MODE POWER MOSFET (Microsemi Corporation)

MSAER30N20A N-CHANNEL ENHANCEMENT MODE POWER MOSFET (Microsemi Corporation)

MSA-0100 Cascadable Silicon Bipolar MMIC Amplifier (Hewlett-Packard)

MSA-0104 Cascadable Silicon Bipolar MMIC Amplifier (Hewlett-Packard)

MSA-0135 Cascadable Silicon Bipolar MMIC Amplifier (Hewlett-Packard)

MSA-0136 Cascadable Silicon Bipolar MMIC Amplifier (Hewlett-Packard)

MSA-0170 Cascadable Silicon Bipolar MMIC Amplifier (Hewlett-Packard)

MSA-0185 Cascadable Silicon Bipolar MMIC Amplifier (Hewlett-Packard)

MSA-0186 Cascadable Silicon Bipolar MMIC Amplifier (Hewlett-Packard)

TAGS

MSAEZ50N10A N-CHANNEL ENHANCEMENT MODE POWER MOSFET Microsemi Corporation

Image Gallery

MSAEZ50N10A Datasheet Preview Page 2

MSAEZ50N10A Distributor