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MSAEZ50N10A, MSAFZ50N10A Datasheet - Microsemi Corporation

MSAEZ50N10A N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Drain-to-Source Breakdown Voltage (Gate Shorted to Source) @ TJ ≥ 25°C SYMBOL BVDSS BVDGR VGS VGSM ID25 ID100 IDM IAR EAR EAS dv/dt PD Tj Tstg IS ISM θJC MAX. 100 100 +/-20 +/-30 50 40 200 50 18.5 400 TBD 300 -55 to +150 -55 to +150 50 200 0.4 UNIT Volts Volts Volts Volts Amps Amps Amps mJ mJ V/n.

MSAEZ50N10A Features

* Ultrafast rectifier in parallel with the body diode (MSAE type only) Rugged polysilicon gate cell structure Increased Unclamped Inductive Switching (UIS) capability Hermetically sealed, surface mount power package Low package ind

MSAFZ50N10A_MicrosemiCorporation.pdf

This datasheet PDF includes multiple part numbers: MSAEZ50N10A, MSAFZ50N10A. Please refer to the document for exact specifications by model.
MSAEZ50N10A Datasheet Preview Page 2

Datasheet Details

Part number:

MSAEZ50N10A, MSAFZ50N10A

Manufacturer:

Microsemi ↗ Corporation

File Size:

68.31 KB

Description:

N-channel enhancement mode power mosfet.

Note:

This datasheet PDF includes multiple part numbers: MSAEZ50N10A, MSAFZ50N10A.
Please refer to the document for exact specifications by model.

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MSAEZ50N10A MSAFZ50N10A N-CHANNEL ENHANCEMENT MODE POWER MOSFET Microsemi Corporation

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