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APTM100H45FT3G MOSFET Power Module

APTM100H45FT3G Description

APTM100H45FT3G Full - Bridge MOSFET Power Module VDSS = 1000V RDSon = 450mΩ typ @ Tj = 25°C ID = 18A @ Tc = 25°C 13 14 Q1 Q3 18 22 7 19 23 8 Q2 .

APTM100H45FT3G Features

* Power MOS 7® FREDFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic reverse diode - Avalanche energy rated - Very rugged
* Kelvin source for easy drive
* Very low stray inductance - Symmetrical design
* Internal thermistor for tem

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MOSFET Power Module Microsemi
Microsemi APTM100H45FT3G-like datasheet