* Power MOS 7® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated
* Parallel SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature Independent switching behavior - Positive temperature coefficient on VF Kelvin
APTM100H45SCT Datasheet (351.27 KB)
APTM100H45SCT
Advanced Power Technology
351.27 KB
Mosfet power module.
APTM100H45SCT Full bridge Series & SiC parallel diodes VDSS = 1000V RDSon = 450mΩ max @ Tj = 25°C ID = 18A @ Tc = 25°C Application Motor con.
📁 Related Datasheet
APTM100H45SCTG MOSFET Power Module (Microsemi)
APTM100H45ST MOSFET Power Module (Advanced Power Technology)
APTM100H45STG MOSFET Power Module (Microsemi)
APTM100H45FT3 MOSFET Power Module (Advanced Power Technology)
APTM100H45FT3G MOSFET Power Module (Microsemi)
APTM100H40FT3G MOSFET Power Module (Microsemi)
APTM100H46FT3G MOSFET Power Module (Microsemi)
APTM100H18F MOSFET Power Module (Advanced Power Technology)
APTM100H18FG MOSFET Power Module (Microsemi)
APTM100H35FT MOSFET Power Module (Advanced Power Technology)
