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APTM100H35FTG MOSFET Power Module

APTM100H35FTG Description

APTM100H35FTG Full - Bridge MOSFET Power Module VDSS = 1000V RDSon = 350mΩ typ @ Tj = 25°C ID = 22A @ Tc = 25°C VBUS Q1 Q3 G1 S1 O UT1 O UT2 Q2 Q4.

APTM100H35FTG Features

* Power MOS 7® FREDFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic reverse diode - Avalanche energy rated - Very rugged
* Kelvin source for easy drive
* Very low stray inductance - Symmetrical design - Lead frames for power connections

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MOSFET Power Module Microsemi
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