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APTM100H45SCTG MOSFET Power Module

APTM100H45SCTG Description

APTM100H45SCTG Full bridge Series & SiC parallel diodes MOSFET Power Module VDSS = 1000V RDSon = 450mΩ typ @ Tj = 25°C ID = 18A @ Tc = 25°C Applica.

APTM100H45SCTG Features

* Q1 CR1B CR3B Q3
* Power MOS 7® MOSFETs - Low RDSon G1 G3 - Low input and Miller capacitance S1 OUT1 OUT2 S3 - Low gate charge CR2A CR4A - Avalanche energy rated Q2 CR2B CR4B Q4
* Parallel SiC Schottky Diode - Zero reverse recovery - Zero forward recovery G2 S2 G4 S4 -

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MOSFET Power Module Microsemi
Microsemi APTM100H45SCTG-like datasheet