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APTM100H45ST MOSFET Power Module

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Description

APTM100H45ST Full bridge Series & parallel diodes MOSFET Power Module VBUS CR1A CR3A VDSS = 1000V RDSon = 450mΩ max @ Tj = 25°C ID = 18A @ Tc = 25°C .

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Features

* Power MOS 7® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged
* Kelvin source for easy drive
* Very low stray inductance - Symmetrical design - Lead frames for power connections
* Internal thermistor for

APTM100H45ST Distributors

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