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APTM100H35FT3G MOSFET Power Module

APTM100H35FT3G Description

APTM100H35FT3G Full - Bridge MOSFET Power Module VDSS = 1000V RDSon = 350mΩ typ @ Tj = 25°C ID = 22A @ Tc = 25°C 13 14 Q1 18 Q3 11 Application

APTM100H35FT3G Features

* Power MOS 7® FREDFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic reverse diode - Avalanche energy rated - Very rugged
* Kelvin source for easy drive
* Very low stray inductance - Symmetrical design 28 27 26 25 29 23 22 20 19 18 16

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MOSFET Power Module Microsemi
Microsemi APTM100H35FT3G-like datasheet