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APTM100H45STG MOSFET Power Module

APTM100H45STG Description

APTM100H45STG Full bridge Series & parallel diodes MOSFET Power Module VDSS = 1000V RDSon = 450mΩ typ @ Tj = 25°C ID = 18A @ Tc = 25°C Application .

APTM100H45STG Features

* G1 S1 O UT1 OUT2 G3 S3
* Power MOS 7® MOSFETs CR 2A CR 4A - Low RDSon - Low input and Miller capacitance Q2 CR2B CR4B Q4 - Low gate charge G2 S2 NTC1 0/ VBU S G4 S4 N T C2 - Avalanche energy rated - Very rugged
* Kelvin source for easy drive
* Very low stray in

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MOSFET Power Module Microsemi
Microsemi APTM100H45STG-like datasheet