Part number:
AFM704A
Manufacturer:
Micross
File Size:
423.24 KB
Description:
Emi filter.
* 40 watts throughout
* 40 dB Noise Reduction@100 kHz
* -55°C to +125°C Operation
* Full Military Screening
* All Ceramic Capacitor Design
* Output Voltage Regulate to 50 Volts Maximum
* Inrush Current Limiting
* Under Voltage Lockout + Input 1 Inhibit Input
AFM704A
Micross
423.24 KB
Emi filter.
📁 Related Datasheet
AFM704A - Advanced Analog EMI Filter
(International Rectifier)
m o .c U 4 t e e h S a at ADVANCED ANALOG .D w EMI FILTER / PROTECTION HYBRID w w
Description
The AFM704A is a bined EMI filter and protection modu.
AFM704AN - EMI FILTER
(Micross)
EMI FILTER PROTECTION HYBRID
PD-94598B
AFM704A SERIES
AFM
Description
The AFM704A is a bined EMI filter and protection module intended to be used.
AFM04P2-000 - Power GaAs MESFET
(Alpha Industries)
Ka Band Power GaAs MESFET Chip
AFM04P2-000 Features
I 21 dBm Output Power @ 18 GHz I High Associated Gain, 9 dB @ 18 GHz I High Power Added Efficiency.
AFM04P3-000 - Power GaAs MESFET
(Alpha Industries)
Low Noise/Medium Power GaAs MESFET Chip
AFM04P3-000 Features
s 21 dBm Output Power @ 18 GHz s High Associated Gain, 9 dB @ 18 GHz s High Power Added E.
AFM04P3-212 - Power GaAs MESFET
(Alpha Industries)
Low Noise/Medium Power GaAs MESFET Chips
AFM04P3-212, AFM04P3-213 Features
s Low Noise Figure, 0.6 dB @ 4 GHz s 20 dBm Output Power @ 18 GHz s High As.
AFM06P2-000 - Power GaAs MESFET
(Alpha Industries)
Ka Band Power GaAs MESFET Chip
AFM06P2-000 Features
s 22.5 dBm Output Power @ 18 GHz s High Associated Gain, 9 dB @ 18 GHz s High Power Added Efficien.
AFM06P3-212 - Power GaAs MESFET
(Alpha Industries)
Ka Band Power GaAs MESFET Chips
AFM06P3-212, AFM06P3-213 Features
s 22 dBm Output Power @ 18 GHz s High Associated Gain, 9 dB @ 18 GHz s High Power Ad.
AFM06P3-213 - Power GaAs MESFET
(Alpha Industries)
Ka Band Power GaAs MESFET Chips
AFM06P3-212, AFM06P3-213 Features
s 22 dBm Output Power @ 18 GHz s High Associated Gain, 9 dB @ 18 GHz s High Power Ad.
