MGFS36E3436A 3.4-3.6GHz HBT HYBRID IC

Mitsubishi Electric Semiconductor

Description

MITSUBISHI SEMICONDUCTOR MGFS36E3436A Specifications are subject to change without notice.3.4-3.6GHz HBT HYBRID IC Outline Drawing .
MGFS36E3436A is a GaAs RF amplifier designed for WiMAX CPE.

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Datasheet Specifications

Part number: MGFS36E3436A
Manufacturer: Mitsubishi Electric Semiconductor
File Size: 189.16 KB
Datasheet: MGFS36E3436A_MitsubishiElectricSemiconductor.pdf
Description: 3.4-3.6GHz HBT HYBRID IC

Features

* InGaP HBT Device 6V Operation 30dB Linear Gain 2.5% EVM at an Output power of 25dBm 4% EVM at an Output power of 27dBm Integrated Output Power Detector Integrated 1-bit 21dB Step Attenuator 50Ω Matche

Applications

* IEEE802.16-2004, IEEE802.16e-2005 1 2 3 4 5 (X-ray Top View) 1 2 3 4 5 6 7 8 9 10 Pin Vc (Vcb) Vc (Vc1) Vc (Vc2) Vc (Vc3) Pout Po_det GND Vref Vcont DIM IN mm FUNCTIONAL BLOCK DIAGRAM www. DataSheet. net/ Vc1 1000pF Vc2 Vc3 1000pF 1000pF Pin Vcont (0/3V) Vcb 1000pF Pout Bias Circuit Vref Po

MGFS36E3436A Distributors

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MGFS36E3436A 3.4-3.6GHz HBT HYBRID Mitsubishi Electric Semiconductor

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