MGFS52BN2122A Datasheet, Fet, Mitsubishi Electric

✔ MGFS52BN2122A Features

Push-pull configuration
High output power Pout=160W (TYP.) @f=2.17GHz
High power gain GLP=12.0dB (TYP.) @f=2.17GHz
High power added efficiency P.A.E.=48% (TYP.) @f=

PDF File Details

Mitsubishi Electric manufacturer logo

Part number:

MGFS52BN2122A

Manufacturer:

Mitsubishi Electric

File Size:

444.14kb

Download:

📄 Datasheet

Description:

Power gaas fet. The MGFS52BN2122A is a 160W push-pull type GaAs power FET especially designed for use in 2.1 * 2.2GHz band amplifiers. The hermetical

📥 Download PDF (444.14kb)

📁 Related Datasheet

MGFS52B2122 - BAND 100W GsAs FET (Mitsubishi Electric)
.. .

MGFS1R5 - DC-DC Converters (COSEL)
DC-DC Converters PCB Mount Type MGFS1R5 Ordering information MGF S 1R5 24 05 -O 123456 1Series name R 2Single output 3Output wattage 4Input voltage .

MGFS36E2325 - 2.3-2.5GHz HBT HYBRID IC (Mitsubishi Electric Semiconductor)
MITSUBISHI SEMICONDUCTOR MGFS36E2325 Specifications are subject to change without notice. 2.3-2.5GHz HBT HYBRID IC Outline Drawing DESCRIPTION MGFS.

MGFS36E2527 - HBT HYBRID IC (Mitsubishi Electric)
.. MITSUBISHI SEMICONDUCTOR Preliminary Specifications are subject to change without notice. MGFS36E2527 2.5-2.7GHz HBT HYBRID IC .

MGFS36E3436A - 3.4-3.6GHz HBT HYBRID IC (Mitsubishi Electric Semiconductor)
MITSUBISHI SEMICONDUCTOR MGFS36E3436A Specifications are subject to change without notice. 3.4-3.6GHz HBT HYBRID IC Outline Drawing DESCRIPTION MGF.

MGFS38E2325-01 - 2.3 - 2.5GHz HBT MMIC MODULE (Mitsubishi Electric Semiconductor)
Mitsubishi Semiconductors MGFS38E2325-01 Specifications are subject to change without notice. 2.3 - 2.5GHz HBT MMIC MODULE Outline Drawing DESCRIPT.

MGFS38E2527-01 - 2.5 - 2.7GHz HBT MMIC MODULE (Mitsubishi Electric Semiconductor)
Mitsubishi Semiconductors Preliminary Specifications are subject to change without notice. MGFS38E2527-01 2.5 - 2.7GHz HBT MMIC MODULE Outline Draw.

MGFS38E3336-01 - 3.3 - 3.6GHz HBT MMIC MODULE (Mitsubishi Electric Semiconductor)
Mitsubishi Semiconductors MGFS38E3336-01 Specifications are subject to change without notice. 3.3 - 3.6GHz HBT MMIC MODULE Outline Drawing DESCRIPT.

MGFS45V2527A - power GaAs FET (Mitsubishi Electric)
0.1±0.05 2.4±0.2 (0.094±0.008) < L/S band internally matched power GaAs FET > MGFS45V2527A 2.5 – 2.7 GHz BAND / 32W DESCRIPTION The MGFS45V2527A is .

MGF0904A - High-power GaAs FET (Mitsubishi)
< High-power GaAs FET (small signal gain stage) > MGF0904A L & S BAND / 0.6W non - matched DESCRIPTION The MGF0904A, GaAs FET with an N-channel schot.

TAGS

MGFS52BN2122A power GaAs FET Mitsubishi Electric