MGFS52BN2122A

power GaAs FET

Mitsubishi Electric

* Push-pull configuration

* High output power Pout=160W (TYP.) @f=2.17GHz

* High power gain GLP=12.0dB (TYP.) @f=2.17GHz

* High power added efficiency P.A.E.=48% (TYP.) @f=2.17GHz APPLICATION

* 2.1-2.2GHz band power amplifier for W-CDMA Base Station QUALITY

* IG OUTLINE RECOMMEND

MGFS52BN2122A

Mitsubishi Electric

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Power gaas fet.

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MGFS52BN2122A power GaAs FET Mitsubishi Electric

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