MGFS45V2527A power GaAs FET

Mitsubishi Electric

Description

0.1±0.05 2.4±0.2 (0.094±0.008) < L/S band internally matched power GaAs FET > MGFS45V2527A 2.5 * 2.7 GHz BAND / 32W .
The MGFS45V2527A is an internally impedance-matched GaAs power FET especially designed for use in 2.

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Datasheet Specifications

Part number: MGFS45V2527A
Manufacturer: Mitsubishi Electric
File Size: 119.32 KB
Datasheet: MGFS45V2527A_MitsubishiElectric.pdf
Description: power GaAs FET

Features

* Class A operation Internally matched to 50(ohm) system
* High output power P1dB=32W (TYP. ) @f=2.5 - 2.7GHz
* High power gain GLP=12.0dB (TYP. ) @f=2.5 - 2.7GHz
* High power added efficiency P. A. E. =45% (TYP. ) @f=2.5 - 2.7GHz
* Low distortion [item -51] IM3=-45dBc (TYP. ) @Po=34.5dBm S. C

MGFS45V2527A Distributors

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MGFS45V2527A power GaAs FET Mitsubishi Electric

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