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MGFS36E2527 HBT HYBRID IC

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Description

www.DataSheet4U.com MITSUBISHI SEMICONDUCTOR Preliminary Specifications are subject to change without notice.MGFS36E2527 2.5-2.7GHz HBT HYBRID IC .
MGFS36E2527 is GaAs RF amplifier designed for WiMAX CPE.

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Features

* InGaP HBT Device 6V Operation 27dBm Linear Output Power 33dB Linear Gain Integrated Output Power Detector Integrated 1-bit 19dB Step Attenuator 50ohms Matched Surface Mount Package RoHS Compliant Package 4.5 1

MGFS36E2527 Distributors

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