* InGaP HBT Device 6V Operation 27dBm Linear Output Power 33dB Linear Gain Integrated Output Power Detector Integrated 1-bit 19dB Step Attenuator 50ohms Matched Surface Mount Package RoHS Compliant Package 4.5 1
MGFS36E2527 Datasheet (79.35 KB)
MGFS36E2527
Mitsubishi Electric
79.35 KB
Hbt hybrid ic.
www.DataSheet4U.com
MITSUBISHI SEMICONDUCTOR
Preliminary
Specifications are subject to change without notice.
MGFS36E2527
2.5-2.7GHz HBT HYBRID IC
.
📁 Related Datasheet
MGFS36E2325 2.3-2.5GHz HBT HYBRID IC (Mitsubishi Electric Semiconductor)
MGFS36E3436A 3.4-3.6GHz HBT HYBRID IC (Mitsubishi Electric Semiconductor)
MGFS38E2325-01 2.3 - 2.5GHz HBT MMIC MODULE (Mitsubishi Electric Semiconductor)
MGFS38E2527-01 2.5 - 2.7GHz HBT MMIC MODULE (Mitsubishi Electric Semiconductor)
MGFS38E3336-01 3.3 - 3.6GHz HBT MMIC MODULE (Mitsubishi Electric Semiconductor)
MGFS1R5 DC-DC Converters (COSEL)
MGFS45V2527A power GaAs FET (Mitsubishi Electric)
MGFS52B2122 BAND 100W GsAs FET (Mitsubishi Electric)
MGFS52BN2122A power GaAs FET (Mitsubishi Electric)
MGF0904A High-power GaAs FET (Mitsubishi)
