2N1175
Motorola
90.17 KB
Pnp transistor.
2N1413thru 2N1415 (GERMANIUM)
2Nl175
CASE 31(1)
(TO-5)
Base connected to case
PNPgermaniumtransistorsfor general-purpose lowfrequency amplifier and .
📁 Related Datasheet
2N1100 - PNP germanium power transistors
(Motorola)
173 2N
(GERMANIUM)
For Specifications, See 2N277 Data.
174 2N
(GERMANIUM)
2Nl100
2N1358,A
CASE 5
(10-36)
PNP germanium power transistors. Powe.
2N1120 - PNP germanium power transistor
(Motorola)
1120 2N
(GERMANIUM)
PNP germanium power transistor for military and industrial power applications.
MAXIMUM RATINGS
Rating Collector-Emitter Voltage.
2N1131 - PNP SILICON ANNULAR TRANSISTORS
(Motorola)
2N 1131 (SILl.CON)
2N1131JAN AVAILABLE
2Nl131A 2N1991
PNP SILICON ANNULAR TRANSISTORS
· .. designed for medium-speed switching and amplifier applicat.
2N1131 - LOW POWER PNP SILICON TRANSISTOR
(Microsemi)
TECHNICAL DATA
LOW POWER PNP SILICON TRANSISTOR
Qualified per MIL-PRF-19500/177 Devices 2N1131 2N1131L 2N1132 2N1132L Qualified Level JAN JANTX
TO-39.
2N1131 - SILICON PNP TRANSISTOR
(Central Semiconductor)
2N1131
SILICON PNP TRANSISTOR
w w w. c e n t r a l s e m i . c o m
DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N1131 is a silicon PNP transistor mounted .
2N1131A - PNP SILICON ANNULAR TRANSISTORS
(Motorola)
2N 1131 (SILl.CON)
2N1131JAN AVAILABLE
2Nl131A 2N1991
PNP SILICON ANNULAR TRANSISTORS
· .. designed for medium-speed switching and amplifier applicat.
2N1131L - LOW POWER PNP SILICON TRANSISTOR
(Microsemi)
TECHNICAL DATA
LOW POWER PNP SILICON TRANSISTOR
Qualified per MIL-PRF-19500/177 Devices 2N1131 2N1131L 2N1132 2N1132L Qualified Level JAN JANTX
TO-39.
2N1132 - LOW POWER PNP SILICON TRANSISTOR
(Microsemi)
TECHNICAL DATA
LOW POWER PNP SILICON TRANSISTOR
Qualified per MIL-PRF-19500/177 Devices 2N1131 2N1131L 2N1132 2N1132L Qualified Level JAN JANTX
TO-39.
