* 5 1 1.5 2 2.5 Pin, INPUT POWER (WATTS) 3 3.5 VDD = 28 V IDQ = 100 mA f = 400 MHz 40 35 30 25 20 15 10 5 0
* 4
* 3
* 1 1
* 2 0 2 VGS, GATE
* SOURCE VOLTAGE (VOLTS) 3 4 f = 400 MHz VDD = 28 V IDQ = 100 mA Pin = CONSTANT TYPICAL DEVICE SHOWN, VGS(th) = 3 V Figure 19.
MRF136
Motorola
284.67 KB
N-channel mos broadband rf power fets.
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF136/D The RF MOSFET Line RF Power Field-Effect Transistors N-Channel Enhancement-.
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