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MRF136 N-CHANNEL MOS BROADBAND RF POWER FETs

MRF136 Description

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF136/D The RF MOSFET Line RF Power Field-Effect Transistors N-Channel Enhancement-.

MRF136 Features

* 5 1 1.5 2 2.5 Pin, INPUT POWER (WATTS) 3 3.5 VDD = 28 V IDQ = 100 mA f = 400 MHz 40 35 30 25 20 15 10 5 0
* 4
* 3
* 1 1
* 2 0 2 VGS, GATE
* SOURCE VOLTAGE (VOLTS) 3 4 f = 400 MHz VDD = 28 V IDQ = 100 mA Pin = CONSTANT TYPICAL DEVICE SHOWN, VGS(th) = 3 V Figure 19.

MRF136 Applications

* up to 400 MHz range, in either single ended or push
* pull configuration.
* Guaranteed 28 Volt, 150 MHz Performance MRF136 MRF136Y Output Power = 15 Watts Output Power = 30 Watts Narrowband Gain = 16 dB (Typ) Broadband Gain = 14 dB (Typ) Efficiency = 60% (Typical) Efficiency = 54% (Typ

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Datasheet Details

Part number
MRF136
Manufacturer
Motorola
File Size
284.67 KB
Datasheet
MRF136_Motorola.pdf
Description
N-CHANNEL MOS BROADBAND RF POWER FETs

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N-CHANNEL MOS BROADBAND POWER FETs Motorola
Motorola MRF136-like datasheet