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MRF154 N-CHANNEL BROADBAND RF POWER MOSFET

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Description

( DataSheet : www.DataSheet4U.com ) MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF154/D The RF MOSFET Line RF Power Field Effec.

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Datasheet Specifications

Part number
MRF154
Manufacturer
Motorola
File Size
195.40 KB
Datasheet
MRF154_Motorola.pdf
Description
N-CHANNEL BROADBAND RF POWER MOSFET

Features

* stages of handling or during transportation. It is recommended that the user makes a final inspection on this before the device installation. ±0.0005″ is considered sufficient for the flange bottom. The same applies to the heat dissipator in the device mounting area. If copper heatsink is not used,

Applications

* GATE CHARACTERISTICS The gate of the RF MOSFET is a polysilicon material, and is electrically isolated from the source by a layer of oxide. The input resistance is very high
* on the order of 109 ohms
* resulting in a leakage current of a few nanoamperes. Gate control is achieved by

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