* be safely operated into an inductive load; however, snubbing reduces switching losses. 10000 VDS = 0 V VGS = 0 V TJ = 25°C 8000 C, CAPACITANCE (pF) 6000 Crss 4000 Ciss 2000 Crss 0 10 5 VGS 0 VDS 5 10 Coss 15 20 25 GATE
* TO
* SOURCE OR DRAIN
* TO
* SOURCE VOLTAGE (VO
MTW35N15E Datasheet (151.15 KB)
MTW35N15E
Motorola
151.15 KB
Tmos power fet.
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MTW35N15E/D
Designer's
TMOS E-FET .™ Power Field Effect Transistor TO-247 with Isolat.
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