* be safely operated into an inductive load; however, snubbing reduces switching losses. 10000 VDS = 0 V VGS = 0 V TJ = 25°C 8000 C, CAPACITANCE (pF) 6000 Crss 4000 Ciss 2000 Crss 0 10 5 VGS 0 VDS 5 10 Coss 15 20 25 GATE
* TO
* SOURCE OR DRAIN
* TO
* SOURCE VOLTAGE (VO
MTW35N15E Datasheet (151.15 KB)
MTW35N15E
Motorola
151.15 KB
Tmos power fet.
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTW35N15E/D Designer's TMOS E-FET .™ Power Field Effect Transistor TO-247 with Isolat.
📁 Related Datasheet
MTW35N15E Power MOSFET (ON Semiconductor)
MTW32N20E TMOS POWER FET (Motorola)
MTW32N20E Power MOSFET (ON Semiconductor)
MTW32N20E N-Channel MOSFET (INCHANGE)
MTW32N25E TMOS POWER FET (Motorola)
MTW33N10E TMOS POWER FET (Motorola)
MTW10N100E TMOS POWER FET (Motorola)
MTW10N100E Power MOSFET (ON Semiconductor)
MTW10N40E TMOS E-FET POWER FIELD EFFECT TRANSISTOR (Motorola)
MTW14N50E TMOS POWER FET (Motorola)
