MTW35N15E TMOS POWER FET

Motorola

Description

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTW35N15E/D Designer's TMOS E-FET .™ Power Field Effect Transistor TO-247 with Isolat.

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Datasheet Specifications

Part number: MTW35N15E
Manufacturer: Motorola
File Size: 151.15 KB
Datasheet: MTW35N15E_Motorola.pdf
Description: TMOS POWER FET

Features

* be safely operated into an inductive load; however, snubbing reduces switching losses. 10000 VDS = 0 V VGS = 0 V TJ = 25°C 8000 C, CAPACITANCE (pF) 6000 Crss 4000 Ciss 2000 Crss 0 10 5 VGS 0 VDS 5 10 Coss 15 20 25 GATE
* TO
* SOURCE OR DRAIN
* TO
* SOURCE VOLTAGE (VO

Applications

* in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits www. DataSheet4U. com where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
* Avalanche E

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MTW35N15E TMOS POWER FET Motorola

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