MTW16N40E Datasheet - ON Semiconductor

MTW16N40E Power MOSFET

MTW16N40E 4 Power MOSFET t 16 Amps, 400 Volts ee N Channel TO 247 This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage blocking capability without degrading performance over time. In addition, this advanced Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain to source diode with a fast recovery time. Designed for high voltage, high.

MTW16N40E Features

* 5°C 1000 Crss GATE-TO-SOURCE OR DRAIN-TO-SOURCE VOLTAGE (VOLTS) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 7a. Capacitance Variation Figure 7b. High Voltage Capacitance Variation http://onsemi.com 4 MTW16N40E VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) 15 12 9 Q1 6 3 0 ID = 16 A TJ = 25°C QT Q2 VGS

MTW16N40E_ONSemiconductor.pdf