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NCE20P09S - P-Channel Enhancement Mode Power MOSFET

NCE Power Semiconductor

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Datasheet Details

Part number	NCE20P09S
Manufacturer	NCE Power Semiconductor
File Size	392.33 KB
Description	P-Channel Enhancement Mode Power MOSFET
Datasheet	NCE20P09S-NCEPowerSemiconductor.pdf

NCE20P09S Product details

Description

The NCE20P09S uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

Features

VDS = -20V,ID = -9A RDS(ON) < 28mΩ @ VGS=-4.5V RDS(ON) < 40mΩ @ VGS=-2.5V.
High power and current handing capability.
Lead free product is acquired.
Surface Mount Package.

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Published: Jun 2, 2018 |