NCE20PK0402J Datasheet, Power Mosfet, NCE Power Semiconductor

P-channel enhancement mode power mosfet

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Part number:

NCE20PK0402J

Manufacturer:

NCE Power Semiconductor

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315.52 KB

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Description:

P-channel enhancement mode power mosfet.
The NCE20PK0402J uses advanced trench technology to provide excellent RDS(ON), low gate charge.
A Schottky diode is provided to facilitate the implementation of a bidirectional blocking switch, or for.

✔ NCE20PK0402J Features

MOSFET
VDS = -20V,ID = -4A RDS(ON) < 80mΩ @ VGS=-4.5V RDS(ON) < 100mΩ @ VGS=-2.5V RDS(ON) < 160mΩ @ VGS=-1.8V Schottky Diode
VKA(V) = 20V, IF = 2A, VF

✔ NCE20PK0402J Application

General Features MOSFET
VDS = -20V,ID = -4A RDS(ON) < 80mΩ @ VGS=-4.5V RDS(ON) < 100mΩ @ VGS=-2.5V RDS(O

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NCE20PK0402J P-Channel Enhancement Mode Power MOSFET NCE Power Semiconductor