NCE3095G Datasheet - NCE Power Semiconductor

NCE3095G N-Channel Enhancement Mode Power MOSFET

NCE3095G Features

* to provide excellent RDS(ON) with low gate charge. It can be

* VDS =30V,ID =95A used in a wide variety of applications. RDS(ON)=3.5mΩ (typical) @ VGS=10V Application RDS(ON)=5.3mΩ (typical) @ VGS=4.5V

* DC/DC Converter

* High density cell design for ultra low Rdson

* Ideal f

Datasheet Details

NCE3095G

NCE Power Semiconductor

406.75 KB

N-channel enhancement mode power mosfet.

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