NCE3095G N-Channel Enhancement Mode Power MOSFET

NCE Power Semiconductor

Description

http://www.ncepower.com NCE3095G NCE N-Channel Enhancement Mode Power MOSFET .
The NCE3095G uses advanced trench technology and design General Features to provide excellent RDS(ON) with low gate charge. VDS =30.

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Datasheet Specifications

Part number: NCE3095G
Manufacturer: NCE Power Semiconductor
File Size: 406.75 KB
Datasheet: NCE3095G-NCEPowerSemiconductor.pdf
Description: N-Channel Enhancement Mode Power MOSFET

Features

* to provide excellent RDS(ON) with low gate charge. It can be

Applications

* RDS(ON)=3.5mΩ (typical) @ VGS=10V Application RDS(ON)=5.3mΩ (typical) @ VGS=4.5V
* DC/DC Converter
* High density cell design for ultra low Rdson
* Ideal for high-frequency switching and synchronous
* Very low on-resistance RDS(on) rectification
* Good stability and unif

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NCE3095G N-Channel Enhancement Mode Power MOSFET NCE Power Semiconductor

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