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NCE3095G N-Channel Enhancement Mode Power MOSFET

NCE3095G Description

http://www.ncepower.com NCE3095G NCE N-Channel Enhancement Mode Power MOSFET .
The NCE3095G uses advanced trench technology and design General Features to provide excellent RDS(ON) with low gate charge. VDS =30.

NCE3095G Features

* to provide excellent RDS(ON) with low gate charge. It can be

NCE3095G Applications

* RDS(ON)=3.5mΩ (typical) @ VGS=10V Application RDS(ON)=5.3mΩ (typical) @ VGS=4.5V
* DC/DC Converter
* High density cell design for ultra low Rdson
* Ideal for high-frequency switching and synchronous
* Very low on-resistance RDS(on) rectification
* Good stability and unif

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Datasheet Details

Part number
NCE3095G
Manufacturer
NCE Power Semiconductor
File Size
406.75 KB
Datasheet
NCE3095G-NCEPowerSemiconductor.pdf
Description
N-Channel Enhancement Mode Power MOSFET

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📌 All Tags

N-Channel Enhancement Mode Power MOSFET NCE Power Semiconductor
NCE Power Semiconductor NCE3095G-like datasheet