NCEAP028N85D Datasheet (NCE Power Semiconductor) - Automotive N-Channel Super Trench II Power MOSFET

NCEAP028N85D, Automotive N-Channel Super Trench II Power MOSFET

The series of devices uses Super Trench II technology that is uniquely optimized to provide the most efficient high frequency switching performance.

Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg.

This device is ideal for high-frequency

NCEAP028N85D Features

* VDS =85V,ID =220A RDS(ON)=2.4mΩ , typical @ VGS=10V

* Excellent gate charge x RDS(on) product(FOM)

* Very low on-resistance RDS(on)

* 175°C operating temperature

* Pb-free lead plating

* 100% UIS tested

* 100% ΔVds tested

* AEC-Q101 qualified TO-263 Schematic Diag