NCEAP028N85D Datasheet - NCE Power Semiconductor

NCEAP028N85D Automotive N-Channel Super Trench II Power MOSFET

The series of devices uses Super Trench II technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency.

NCEAP028N85D Features

* VDS =85V,ID =220A RDS(ON)=2.4mΩ , typical @ VGS=10V

* Excellent gate charge x RDS(on) product(FOM)

* Very low on-resistance RDS(on)

* 175°C operating temperature

* Pb-free lead plating

* 100% UIS tested

* 100% ΔVds tested

* AEC-Q101 qualified TO-263 Schematic Diag

NCEAP028N85D-NCEPowerSemiconductor.pdf

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Datasheet Details

Part number:

NCEAP028N85D

Manufacturer:

NCE Power Semiconductor

File Size:

851.00 KB

Description:

Automotive n-channel super trench ii power mosfet.

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NCEAP028N85D NCEAP028N85D Automotive N-Channel Super Trench Power MOSFET NCE Power Semiconductor

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