NCEAP40T13AGU Datasheet - NCE Power Semiconductor

NCEAP40T13AGU Automotive N-Channel Super Trench Power MOSFET

The NCEAP40T13AGU uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switch.

NCEAP40T13AGU Features

* VDS =40V,ID =190A (Silicon Limited) RDS(ON)=1.8mΩ (typical) @ VGS=10V

* Excellent gate charge x RDS(on) product(FOM)

* Very low on-resistance RDS(on)

* 175 °C operating temperature

* Pb-free lead plating

* 100% UIS tested

* 100% ΔVds tested

* AEC-Q101 qualified DFN

NCEAP40T13AGU-NCEPowerSemiconductor.pdf

NCEAP40T13AGU Datasheet Preview — Preview of NCEAP40T13AGU PDF

Datasheet Details

Part number:

NCEAP40T13AGU

Manufacturer:

NCE Power Semiconductor

File Size:

527.80 KB

Description:

Automotive n-channel super trench power mosfet.

NCEAP40T13AGU Distributor

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NCEAP40T13AGU NCEAP40T13AGU Automotive N-Channel Super Trench Power MOSFET NCE Power Semiconductor