NCEAP0178AK Datasheet - NCE Power Semiconductor

NCEAP0178AK Automotive N-Channel Super Trench Power MOSFET

The NCEAP0178AK uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switchin.

NCEAP0178AK Features

* VDS =100V,ID =78A RDS(ON) =7.2mΩ(typical) @ VGS=10V RDS(ON) =9.5mΩ(typical) @ VGS=4.5V

* Excellent gate charge x RDS(on) product(FOM)

* Very low on-resistance RDS(on)

* 175 °C operating temperature

* Pb-free lead plating

* 100% UIS tested

* 100% ΔVds tested

* AEC-Q1

NCEAP0178AK-NCEPowerSemiconductor.pdf