NCEAP40T11G Datasheet - NCE Power Semiconductor

NCEAP40T11G Automotive N-Channel Super Trench Power MOSFET

The NCEAP40T11G uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switchin.

NCEAP40T11G Features

* VDS =40V,ID =150A RDS(ON)=2.2mΩ (typical) @ VGS=10V RDS(ON)=3.3mΩ (typical) @ VGS=4.5V

* Excellent gate charge x RDS(on) product(FOM)

* Very low on-resistance RDS(on)

* 175 °C operating temperature

* Pb-free lead plating

* 100% UIS tested

* 100% ΔVds tested

* AEC-Q1

NCEAP40T11G-NCEPowerSemiconductor.pdf

NCEAP40T11G Datasheet Preview — Preview of NCEAP40T11G PDF

Datasheet Details

Part number:

NCEAP40T11G

Manufacturer:

NCE Power Semiconductor

File Size:

663.87 KB

Description:

Automotive n-channel super trench power mosfet.

📁 Related Datasheet

NCEAP40T20AD Automotive N-Channel Super Trench Power MOSFET (NCE Power Semiconductor)

NCEAP028N85D Automotive N-Channel Super Trench II Power MOSFET (NCE Power Semiconductor)

NCE0102 N-Channel Enhancement Mode Power MOSFET (NCE Power Semiconductor)

NCE0102M N-Channel Enhancement Mode Power MOSFET (NCE Power Semiconductor)

NCE0102Z N-Channel Enhancement Mode Power MOSFET (NCE Power Semiconductor)

NCE0103 N-Channel Enhancement Mode Power MOSFET (NCE Power Semiconductor)

NCE0103 N-Channel 100V MOSFET (VBsemi)

NCE0103M N-Channel Enhancement Mode Power MOSFET (NCE Power Semiconductor)

TAGS

NCEAP40T11G NCEAP40T11G Automotive N-Channel Super Trench Power MOSFET NCE Power Semiconductor

NCEAP40T11G Distributor