NCEAP40T11G Datasheet - NCE Power Semiconductor

Automotive N-Channel Super Trench Power MOSFET

NCEAP40T11G Features

* VDS =40V,ID =150A RDS(ON)=2.2mΩ (typical) @ VGS=10V RDS(ON)=3.3mΩ (typical) @ VGS=4.5V

* Excellent gate charge x RDS(on) product(FOM)

* Very low on-resistance RDS(on)

* 175 °C operating temperature

* Pb-free lead plating

* 100% UIS tested

* 100% ΔVds tested

* AEC-Q1

NCEAP40T11G General Description

The NCEAP40T11G uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switchin.

NCEAP40T11G Datasheet (663.87 KB)

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Datasheet Details

Part number:

NCEAP40T11G

Manufacturer:

NCE Power Semiconductor

File Size:

663.87 KB

Description:

Automotive n-channel super trench power mosfet.

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NCEAP40T11G Automotive N-Channel Super Trench Power MOSFET NCE Power Semiconductor

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NCEAP40T11G Features

NCEAP40T11G General Description

Datasheet Details

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Description:

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