NCEAP40P80K - Automotive P-Channel Power MOSFET

NCE Power Semiconductor

Datasheet Details

Part number	NCEAP40P80K
Manufacturer	NCE Power Semiconductor
File Size	392.88 KB
Description	Automotive P-Channel Power MOSFET
Datasheet	NCEAP40P80K-NCEPowerSemiconductor.pdf

The NCEAP40P80K uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance.

VDS =-40V,ID =-95A RDS(ON)=7.2mΩ (typical) @ VGS=-10V RDS(ON)=11mΩ (typical) @ VGS=-4.5V.
Excellent gate charge x RDS(on) product(FOM).
Very low on-resistance RDS(on).
175 °C operating temperature.
Pb-free lead plating.
100% UIS tested.
100% ΔVds tested.
AEC-Q101 qualified.

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Published: Nov 4, 2025 |