Datasheet4U Logo Datasheet4U.com

2SK2411 - SWITCHING N-CHANNEL POWER MOSFET

Datasheet Summary

Description

The 2SK2411 is N-Channel MOS Field Effect Transistor designed for high speed switching applications.

(in millimeter) 10.6 MAX.

5.9 MIN.

Features

  • Low On-Resistance RDS(on)1 = 40 mΩ MAX. (@ VGS = 10 V, ID = 15 A) RDS(on)2 = 60 mΩ MAX. (@ VGS = 4 V, ID = 15 A) 4 1.3 ±0.2 0.75 ±0.1 2.54 1 2 3.
  • Low Ciss Ciss = 1500 pF TYP.
  • Built-in G-S Gate Protection Diodes.
  • High Avalanche Capability Ratings.

📥 Download Datasheet

Datasheet preview – 2SK2411

Datasheet Details

Part number 2SK2411
Manufacturer NEC Electronics
File Size 60.03 KB
Description SWITCHING N-CHANNEL POWER MOSFET
Datasheet download datasheet 2SK2411 Datasheet
Additional preview pages of the 2SK2411 datasheet.

📁 Similar Datasheet

  • 2SK241 - Silicon N-Channel MOSFET (Toshiba Semiconductor)
  • 2SK2410 - SWITCHING N-CHANNEL POWER MOSFET (NEC)
  • 2SK2412 - SWITCHING N-CHANNEL POWER MOSFET (NEC)
  • 2SK2413 - SWITCHING N-CHANNEL POWER MOSFET (NEC)
  • 2SK2414 - SWITCHING N-CHANNEL POWER MOSFET (NEC)
  • 2SK2414 - MOS Field Effect Transistor (Kexin)
  • 2SK2414-Z - SWITCHING N-CHANNEL POWER MOSFET (NEC)
  • 2SK2415 - SWITCHING N-CHANNEL POWER MOSFET (NEC)
  • 2SK2415-Z - SWITCHING N-CHANNEL POWER MOSFET (NEC)
  • 2SK2415-Z-E1-AZ - N-Channel MOSFET (VBsemi)
Other Datasheets by NEC Electronics
  • 2SK2411-Z - SWITCHING N-CHANNEL POWER MOSFET
  • 2SK1749 - Switching N-Channel Power MOS FET
  • 2SK3570 - Switching N-Channel MOSFET
  • 2SK3571 - Switching N-Channel MOSFET
  • 2SK3572 - Switching N-Channel MOSFET
  • 2SK3573 - Switching N-Channel MOSFET
  • 2SK3574 - Switching N-Channel MOSFET
  • 2SK3575 - Switching N-Channel MOSFET

Full PDF Text Transcription

Click to expand full text
DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2411, 2SK2411-Z SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2411 is N-Channel MOS Field Effect Transistor designed for high speed switching applications. 3.0 ±0.3 PACKAGE DIMENSIONS (in millimeter) 10.6 MAX. 10.0 5.9 MIN. 12.7 MIN. 15.5 MAX. 3.6 ±0.2 4.8 MAX. 1.3 ±0.2 FEATURES • Low On-Resistance RDS(on)1 = 40 mΩ MAX. (@ VGS = 10 V, ID = 15 A) RDS(on)2 = 60 mΩ MAX. (@ VGS = 4 V, ID = 15 A) 4 1.3 ±0.2 0.75 ±0.1 2.54 1 2 3 • Low Ciss Ciss = 1500 pF TYP.
Published: |