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NX3008PBKS
30 V, 200 mA dual P-channel Trench MOSFET
Rev. 1 — 1 August 2011 Product data sheet
1. Product profile
1.1 General description
Dual P-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
1.2 Features and benefits
Very fast switching Low threshold voltage Trench MOSFET technology ESD protection up to 2 kV AEC-Q101 qualified
1.3 Applications
Relay driver High-speed line driver High-side loadswitch Switching circuits
1.4 Quick reference data
Table 1. Symbol Per transistor VDS VGS ID drain-source voltage gate-source voltage drain current VGS = -4.5 V; Tamb = 25 °C VGS = -4.
NX3008PBKS Datasheet
